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boiling point of silicon

Input interpretation

silicon | boiling point
silicon | boiling point

Result

2900 °C (degrees Celsius)
2900 °C (degrees Celsius)

Unit conversions

3200 K (kelvins)
3200 K (kelvins)
5300 °F (degrees Fahrenheit)
5300 °F (degrees Fahrenheit)
5700 °R (degrees Rankine)
5700 °R (degrees Rankine)
2300 °Ré (degrees Réaumur)
2300 °Ré (degrees Réaumur)
1500 °Rø (degrees Rømer)
1500 °Rø (degrees Rømer)

Blackbody information

  perceived color |  peak wavelength | 910 nm (nanometers) peak frequency | 190 THz (terahertz)
perceived color | peak wavelength | 910 nm (nanometers) peak frequency | 190 THz (terahertz)

Corresponding quantities

Thermodynamic energy E from E = kT:  | 27 ceV (centielectronvolts)
Thermodynamic energy E from E = kT: | 27 ceV (centielectronvolts)
Blackbody energy flux Φ from Φ = σT^4:  | 5.749×10^6 W/m^2 (watts per square meter)
Blackbody energy flux Φ from Φ = σT^4: | 5.749×10^6 W/m^2 (watts per square meter)
Approximate luminous exitance from a planar blackbody radiator perpendicular to its surface:  | 1.506×10^8 lx (lux)
Approximate luminous exitance from a planar blackbody radiator perpendicular to its surface: | 1.506×10^8 lx (lux)