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specific heat vs solidification semiconductors

Input interpretation

semiconductors | specific heat at STP | semiconductors | melting point
semiconductors | specific heat at STP | semiconductors | melting point

Results

specific heat at STP | 321.4 J/(kg K) (joules per kilogram kelvin difference) (median) melting point | 938.3 °C (degrees Celsius) (median)
specific heat at STP | 321.4 J/(kg K) (joules per kilogram kelvin difference) (median) melting point | 938.3 °C (degrees Celsius) (median)

Table

| | specific heat at STP | melting point 1 | tellurium | 201 J/(kg K) | 449.51 °C 2 | germanium | 321.4 J/(kg K) | 938.3 °C 3 | silicon | 710 J/(kg K) | 1414 °C
| | specific heat at STP | melting point 1 | tellurium | 201 J/(kg K) | 449.51 °C 2 | germanium | 321.4 J/(kg K) | 938.3 °C 3 | silicon | 710 J/(kg K) | 1414 °C

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