Input interpretation
semiconductors | boiling point
Results
germanium | 2820 °C (degrees Celsius) silicon | 2900 °C (degrees Celsius) tellurium | 988 °C (degrees Celsius)
semiconductors | boiling point | 2820 °C (degrees Celsius) (median)
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Unit conversions for median boiling point 2820 °C
3093 K (kelvins)
5108 °F (degrees Fahrenheit)
5568 °R (degrees Rankine)
2256 °Ré (degrees Réaumur)
1488 °Rø (degrees Rømer)
Blackbody information for median boiling point 2820 °C (degrees Celsius)
perceived color | peak wavelength | 936.8 nm (nanometers) peak frequency | 181.8 THz (terahertz)
Corresponding quantities
Thermodynamic energy E from E = kT: | 27 ceV (centielectronvolts)
Blackbody energy flux Φ from Φ = σT^4: | 5.191×10^6 W/m^2 (watts per square meter)
Approximate luminous exitance from a planar blackbody radiator perpendicular to its surface: | 1.225×10^8 lx (lux)