silicon vs tin

silicon (chemical element) | tin (chemical element)

Periodic table location

Images

| silicon | tin atomic symbol | Si | Sn atomic number | 14 | 50 short electronic configuration | [Ne]3s^23p^2 | [Kr]5s^24d^105p^2 Aufbau diagram | 3p 3s | 5p 4d 5s block | p | p group | 14 | 14 period | 3 | 5 atomic mass | 28.085 u | 118.71 u half-life | (stable) | (stable)

| silicon | tin phase at STP | solid | solid melting point | 1414 °C | 231.93 °C boiling point | 2900 °C | 2602 °C molar heat of fusion | 50.2 kJ/mol | 7 kJ/mol molar heat of vaporization | 359 kJ/mol | 290 kJ/mol specific heat at STP | 710 J/(kg K) | 217 J/(kg K) (properties at standard conditions)

| silicon | tin density | 2.33 g/cm^3 | 7.31 g/cm^3 liquid density | 2.57 g/cm^3 | 6.99 g/cm^3 molar volume | 12.05 cm^3/mol | 16.24 cm^3/mol Mohs hardness | 6.5 (between microcline and quartz) | 1.5 (between talc and gypsum) Vickers hardness | 9630 MPa | Brinell hardness | | 51 MPa bulk modulus | 100 GPa | 58 GPa shear modulus | | 18 GPa Young's modulus | 47 GPa | 50 GPa Poisson ratio | | 0.36 ultimate tensile strength | | 220 MPa sound speed | 2200 m/s | 2500 m/s thermal expansion | 2.6×10^-6 K^(-1) | 2.2×10^-5 K^(-1) thermal conductivity | 150 W/(m K) | 67 W/(m K) (properties at standard conditions)

| silicon | tin electrical type | semiconductor | conductor resistivity | 0.001 Ω m (ohm meters) | 1.1×10^-7 Ω m (ohm meters) electrical conductivity | 1000 S/m (siemens per meter) | 9.1×10^6 S/m (siemens per meter) magnetic type | diamagnetic | diamagnetic volume magnetic susceptibility | -3.73×10^-6 | -2.27×10^-5 mass magnetic susceptibility | -1.6×10^-9 m^3/kg (cubic meters per kilogram) | -3.1×10^-9 m^3/kg (cubic meters per kilogram) molar magnetic susceptibility | -4.49×10^-11 m^3/mol (cubic meters per mole) | -3.68×10^-10 m^3/mol (cubic meters per mole) work function | (4.6 to 4.91) eV | 4.42 eV (Polycrystalline) threshold frequency | (1.112×10^15 to 1.187×10^15) Hz (hertz) | 1.069×10^15 Hz (hertz) superconducting point | | 3.72 K (kelvins) color | (gray) | (silver)

| silicon | tin valence | 4 | 4 electronegativity | 1.9 | 1.96 electron affinity | 133.6 kJ/mol (kilojoules per mole) | 107.3 kJ/mol (kilojoules per mole) first ionization energy | 786.5 kJ/mol (kilojoules per mole) | 708.6 kJ/mol (kilojoules per mole) ionization energies | 786.5 kJ/mol | 1577.1 kJ/mol | 3231.6 kJ/mol | 4355.5 kJ/mol | 16091 kJ/mol | 19805 kJ/mol | 23780 kJ/mol | 29287 kJ/mol | 33878 kJ/mol | 38726 kJ/mol | 708.6 kJ/mol | 1411.8 kJ/mol | 2943 kJ/mol | 3930.3 kJ/mol | 7456 kJ/mol

Reactivity

| silicon | tin term symbol | ^3P_0 | ^3P_0 atomic radius | 110 pm | 145 pm covalent radius | 111 pm | 139 pm van der Waals radius | 210 pm | 217 pm (electronic ground state properties)

| silicon | tin universe abundance | 0.07 mass% | 4×10^-7 mass% solar abundance | 0.09 mass% | 9×10^-7 mass% meteorite abundance | 14 mass% | 1.2×10^-4 mass% crust abundance | 27 mass% | 2.2×10^-4 mass% ocean abundance | 1×10^-4 mass% | 1×10^-9 mass% human abundance | 0.026 mass% | 2×10^-5 mass% universe molar abundance | 0.003 mol% | 4×10^-9 mol% solar molar abundance | 0.004 mol% | 9.9×10^-9 mol% meteorite molar abundance | 10 mol% | 1.7×10^-5 mol% ocean molar abundance | 2.2×10^-5 mol% | 5.2×10^-11 mol% crust molar abundance | 20 mol% | 3.8×10^-5 mol% human molar abundance | 0.0058 mol% | 1.1×10^-6 mol%

| silicon | tin half-life | (stable) | (stable) stable isotopes | Si-28 (92.23%) | Si-29 (4.683%) | Si-30 (3.087%) | Sn-120 (32.58%) | Sn-118 (24.22%) | Sn-116 (14.54%) | Sn-119 (8.59%) | Sn-117 (7.68%) | Sn-124 (5.79%) | Sn-122 (4.63%) | Sn-112 (0.97%) | Sn-114 (0.66%) | Sn-115 (0.34%) nuclear spin | Si-22: 0^+ | Si-23: 5/2^+ | Si-24: 0^+ | Si-25: 5/2^+ | Si-26: 0^+ | Si-27: 5/2^+ | Si-28: 0^+ | Si-29: 1/2^+ | Si-30: 0^+ | Si-31: 3/2^+ | Si-32: 0^+ | Si-33: 3/2^+ | Si-34: 0^+ | Si-35: 7/2^- | Si-36: 0^+ | Si-37: 7/2^- | Si-38: 0^+ | Si-39: 7/2^- | Si-40: 0^+ | Si-41: 7/2^- | Si-42: 0^+ | Si-43: 3/2^- | Si-44: 0^+ | Sn-99: 9/2^+ | Sn-100: 0^+ | Sn-101: 5/2^+ | Sn-102: 0^+ | Sn-103: 5/2^+ | Sn-104: 0^+ | Sn-105: 5/2^+ | Sn-106: 0^+ | Sn-107: 5/2^+ | Sn-108: 0^+ | Sn-109: 5/2^+ | Sn-110: 0^+ | Sn-111: 7/2^+ | Sn-112: 0^+ | Sn-113: 1/2^+ | Sn-114: 0^+ | Sn-115: 1/2^+ | Sn-116: 0^+ | Sn-117: 1/2^+ | Sn-118: 0^+ | Sn-119: 1/2^+ | Sn-120: 0^+ | Sn-121: 3/2^+ | Sn-122: 0^+ | Sn-123: 11/2^- | Sn-124: 0^+ | Sn-125: 11/2^- | Sn-126: 0^+ | Sn-127: 11/2^- | Sn-128: 0^+ | Sn-129: 3/2^+ | Sn-130: 0^+ | Sn-131: 3/2^+ | Sn-132: 0^+ | Sn-133: 7/2^- | Sn-134: 0^+ | Sn-135: 7/2^- | Sn-136: 0^+ | Sn-137: 5/2^- unstable isotopes | Si-32 (153 yr) | Si-31 (157.3 min) | Si-33 (6.11 s) | Si-27 (4.16 s) | Si-34 (2.77 s) | Si-26 (2.234 s) | Si-35 (780 ms) | Si-36 (450 ms) | Si-25 (220 ms) | Si-24 (140 ms) | Si-37 (90 ms) | Si-39 (47.5 ms) | Si-23 (42.3 ms) | Si-40 (33 ms) | Si-22 (29 ms) | Si-41 (20 ms) | Si-42 (12.5 ms) | Si-38 (1 µs) | Si-44 (360 ns) | Si-43 (60 ns) | Sn-126 (0.23 Myr) | Sn-123 (129.2 days) | Sn-113 (115.09 days) | Sn-125 (9.64 days) | Sn-121 (27.031 h) | Sn-110 (4.11 h) | Sn-127 (130 min) | Sn-128 (59.07 min) | Sn-111 (35.33 min) | Sn-109 (18 min) | Sn-108 (10.3 min) | Sn-130 (223 s) | Sn-107 (174 s) | Sn-129 (134 s) | Sn-106 (115 s) | Sn-131 (56 s) | Sn-132 (39.7 s) | Sn-105 (34 s) | Sn-104 (20.8 s) | Sn-103 (7 s) | Sn-102 (4.5 s) | Sn-101 (1.7 s) | Sn-133 (1.45 s) | Sn-134 (1.05 s) | Sn-100 (1 s) | Sn-135 (530 ms) | Sn-136 (250 ms) | Sn-137 (190 ms) | Sn-99 (5 ms) neutron cross-section | 0.166 b | 0.63 b neutron mass absorption | 2×10^-4 m^2/kg | 2×10^-4 m^2/kg

| silicon | tin CAS number | 7440-21-3 | 7440-31-5 PubChem CID number | 5461123 |