Input interpretation
Si-32 (silicon-32)
Decay properties
half-life | 153 years (130 to 176 yr) mean lifetime | 221 years (187 to 254 yr) decay constant | 1.44×10^-10 per second specific activity | 2.71 TBq/g (terabecquerels per gram) width | 6.55×10^-26 eV (electronvolts) decay modes | β^- (electron emission) final decay products | S-32 (100%)
Decay mode
decay mode | β^- (electron emission) Q-value | 224.311 keV (kiloelectronvolts) daughter nuclide | P-32
Radiation shielding
lead | 96.1 µm portland concrete | 280 µm water | 538 µm air | 47.8 cm
Decay chain
Decay chain
Mass properties
atomic number (Z) | 14 mass number (A) | 32 neutron number | 18 atomic mass | 31.974148082 u (unified atomic mass units) mass excess | -24.080907 MeV (megaelectronvolts) binding energy per nucleon | 8.481569 MeV (megaelectronvolts)
Mass properties
Nearby isotopes
Nearby isotopes
Quantum properties
spin parity J^π | 0^+ (atomic boson) magnetic moment | 0 μ_N
Quantum properties
Excitations
E_level | spin parity J^π | half-life τ_1/2 | width Δ 1941.4 keV (kiloelectronvolts) | 2^+ | 6.3×10^-13 seconds | 7.2×10^-4 eV (electronvolts) 4230.8 keV (kiloelectronvolts) | 2^+ | 2.6×10^-13 seconds | 0.0018 eV (electronvolts) 4983.9 keV (kiloelectronvolts) | 0^+ | 3×10^-13 seconds | 0.0015 eV (electronvolts) 5220 keV (kiloelectronvolts) | 1 or 2 or 3 or 4 (uncertain) | 8×10^-14 seconds | 0.0057 eV (electronvolts) 5288.8 keV (kiloelectronvolts) | 3^- | 1.52×10^-13 seconds | 0.003 eV (electronvolts) 5412.4 keV (kiloelectronvolts) | 2^+ | 5×10^-14 seconds | 0.0091 eV (electronvolts) 5502 keV (kiloelectronvolts) | 4^+ or 5^- (uncertain) | (unknown) | (unknown) 5581 keV (kiloelectronvolts) | 5^- | 2.7×10^-8 seconds | 1.7×10^-8 eV (electronvolts) 5773 keV (kiloelectronvolts) | 1 or 2 or 3 (uncertain) | 1.39×10^-13 seconds | 0.00328 eV (electronvolts) 5785.7 keV (kiloelectronvolts) | 0^+ or 1^+ or 2^+ (uncertain) | 8×10^-13 seconds | 6×10^-4 eV (electronvolts)